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| NJG1101F WIDE BAND AGC AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1101F is a GaAs MMIC designed mainly for wireless phone handsets at frequency range of 850MHz from 2.5GHz. NJG1101F is a variable gain amplifier with 40 dB dynamic range and exhibits low current consumption. MTP6 package is adopted. nFEATURES lSingle and low voltage operation lLow current consumption lSmall signal gain lWide gain control range lPout at 1dB gain compression point lPackage nPIN CONFIGURATION nPACKAGE OUTLINE NJG1101F VDD=+3.0V typ. IDD=10mA typ. 18dB typ. @f=1.5GHz (f=0.85~2.5GHz @3dB down) 40dB typ. @VCONT=+0.1~+2.0V +1.5dBm typ. @f=1.5GHz MTP6 (Mount Size: 2.8 x 2.9 x 1.2mm) F TYPE (Top View) 1 6 2 5 Pin connection 1.RFin 2.GND 3.VCONT 4.RFout & VDD 5.GND 6.VDD 3 Note: 4 is a package orientation mark. -1- NJG1101F nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Gain Control Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL CONDITIONS VDD VCONT VDD=3V Pin VDD=3V, VCONT=2V PD Topr Tstg (Ta=+25C, Zs=Zl=50) RATINGS UNITS 6 V 3 V 10 dBm 300 mW -40~+85 C -55~+150 C nELECTRICAL CHARACTERISTICS1 (Wide band: Measured at TEST CIRCUIT 1) (Ta=25C, Zs=Zl=50) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq VDD=3.0V 0.85 1.5 2.5 GHz Drain Voltage Operating Current Small Signal Gain Gain Flatness Gain Control Range Pout at 1dB Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) VDD IDD Gain Gflat Gcont P-1dB Pacp 2.7 VDD=3.0V, VCONT=2V, Pout=-10dBm VDD=3.0V, VCONT=2V, 15.5 Pout=-10dBm, f=1.5GHz VDD=3.0V, VCONT =2V, Pin=-25dBm f=0.85~2.5GHz VDD=3.0V, VCONT=0.1~2.0V, 35 Pin=-25dBm, f=1.5GHz VDD=3.0V, VCONT=2V, f=1.5GHz VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz Offset=50kHz, Pin ; /4 DQPSK 3.0 10 18 3 40 +1.5 -68 5.0 13 21 V mA dB dB dB dBm dBc -2- NJG1101F nELECTRICAL CHARACTERISTICS 2 (800MHz Band: Measured at TEST CIRCUIT 2) (Ta=25C, Zs=Zl=50) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Gain Control Range Pout at 1dB Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) Input VSWR Output VSWR freq VDD IDD Gain Gflat Gcont P-1dB Pacp VSWRi VSWRo VDD=3.0V, VCONT=2V, Pout=-10dBm VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz VDD=3.0V, VCONT=2V, Pin=-25dBm, f=0.85~2.5GHz VDD=3.0V, VCONT=0.1~2.0V, Pin=-25dBm, f=1.5GHz VDD=3.0V, VCONT=2V, f=1.5GHz VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz offset=50kHz, Pin ; /4 DQPSK VDD=3.0V, VCONT=2V, f=1.5GHz VDD=3.0V, VCONT=2V, f=1.5GHz VDD=3.0V 850 2.7 15.5 35 938 3.0 10 18 0.5 40 +1.5 -68 1.8 1.5 960 5.0 13 21 MHz V mA dB dB dB dBm dBc -3- NJG1101F nELECTRICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GH: Measured at TEST CIRCUIT 2) (Ta=25C, Zs=Zl=50) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency 1 Operating Frequency 2 Drain Voltage Operating Current Small Signal Gain Gain Flatness 1 Gain Flatness 2 Gain Control Range Pout at 1dB Gain Compression point 1 Pout at 1dB Gain Compression point 2 Adjacent Channel Leakage Power 1 (PDC Regulation) Adjacent Channel Leakage Power 2 (PDC Regulation) Input VSWR Output VSWR freq1 freq2 VDD IDD Gain Gflat1 Gflat2 Gcont P-1dB1 P-1dB2 Pacp1 VDD=3.0V, VCONT=2V, Pout=-10dBm VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1.5GHz VDD=3.0V, VCONT=2V, Pin=-25dBm, f=1429~1453MHz VDD=3.0V, VCONT=2V, Pin=-25dBm, f=1800~1920MHz VDD=3.0V, VCONT=0.1~2.0V, Pin=-25dBm VDD=3.0V, VCONT=2V f=1429~1453MHz VDD=3.0V, VCONT=2V f=1800~1920MHz VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1441MHz offset=50kHz, Pin ; /4 DQPSK VDD=3.0V, VCONT=2V, Pout=-10dBm, f=1900MHz offset=50kHz, Pin ; /4 DQPSK VDD=3.0V, VCONT=2V VDD=3.0V, VCONT=2V VDD=3.0V VDD=3.0V 1429 1441 1453 1800 1900 1920 2.7 15.5 35 3.0 10 18 0.5 0.5 40 +1.5 +1.0 -68 5.0 13 21 MHz MHz V mA dB dB dB dB dBm dBm dBc Pacp2 VSWRi VSWRo - -70 1.8 1.5 - dBc -4- NJG1101F nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1) S21,S11,S22,S12 vs. FREQUENCY (V =3V, V 20 S21 10 S21,S11,S22 (dB) -20 DD cont =2V) -10 GAIN vs. FREQUENCY (V =3V) 20 10 0 S12 (dB) DD Vcont= 2.0V 1.2V 1.0V 0.5V 0.3V 0.2V 0.1V 0.0V 0 S12 -10 S11 -20 S22 -30 -40 Gain (dB) -10 -20 -30 -40 -50 -30 0.5 -60 1 1.5 2 Frequency (GHz) 2.5 3 -50 0.5 1 1.5 2 Frequency (GHz) 2.5 3 GAIN, NF vs. FREQUENCY (VDD=3V, Vcont=2V) 20 Gain 15 6 15 7 20 GAIN, NF vs. FREQUENCY (V DD=4.5V, Vcont=3V) 7 Gain 6 Gain (dB) Gain (dB) NF (dB) 10 5 10 5 5 4 5 4 NF 0 0.5 3 1 1.5 2 2.5 3 Frequency (GHz) 0 0.5 1 1.5 2 NF 3 2.5 3 Frequency (GHz) INPUT VSWR vs. FREQUENCY (V =3V) 7 6 DD OUTPUT VSWR vs. FREQUENCY (V =3V) 3.5 DD 3 V V cont cont Input VSWR =2.0V Output VSWR 5 4 3 2 1 0.5 1.0V 0.1V 0.1V 1.0V 2.0V =2.0V 1.0V 2.5 0.1V 2 0.1V 1.0V 2.0V 1.5 1 1.5 2 Freqency (GHz) 2.5 3 1 0.5 1 1.5 2 Freqency (GHz) 2.5 3 NF (dB) -5- NJG1101F nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1) I 12 DD vs. V DD GAIN, I (V cont =V -1V) DD DD vs. Vcont (Variable Gain) (V DD=3V, Pin=-25dBm) Gain f=1.5GHz 13 12 11 10 9 8 7 IDD (mA) 20 10 11 0 Gain (dB) (mA) 2.5GHz -10 -20 2.5GHz 10 I DD 9 1.5GHz -30 IDD 8 2 3 V 4 DD 5 (V) 6 -40 0 0.5 V 1 cont 1.5 (V) 2 OUTPUT POWER, I DD DD vs. INPUT POWER cont OUTPUT POWER, I DD DD vs. INPUT POWER cont (V =3V, V 10 =2V, f=1.5GHz) 13 10 (V =3V, V =2V, f=2.5GHz) 13 Output Power (dBm) Output Power (mA) P-1dB +1.4dBm Output Power (dBm) 5 12 5 Output Power 0 P-1dB +1.0dBm 12 DD I -5 I 10 DD -5 I DD 10 -10 -30 -25 -20 -15 -10 -5 0 Input Power (dBm) 9 -10 -30 -25 -20 -15 -10 -5 0 Input Power (dBm) 9 GAIN vs. Vcont (f=1.5GHz) 20 10 4.5V 0 -10 -20 3V GAIN vs. Vcont (f=2.5GHz) 20 VDD=4.5V 10 V =4.5V DD Gain (dB) Gain (dB) VDD=3V 0 4.5V V =3V DD -10 3V -30 -40 0 -20 -30 1 2 3 cont 4 5 0 1 2 3 cont 4 5 V (V) V (V) -6- I DD 0 11 11 (mA) NJG1101F nTYPICAL CHARACTERISTICS 1 (Wide Band: Measured on TEST CIRCUIT 1) -7- NJG1101F nTYPICAL CHARACTERISTICS 2 (PDC 800MHz Band: Measured on TEST CIRCUIT 2) GAIN vs. FREQUENCY (V =3V) DD GAIN vs. V 20 Vcont=2.0V 10 1.5V cont (V =3V, f=938MHz) DD 20 10 0 Gain (dB) -10 0.5V Gain (dB) 1.0V 0 -10 -20 0.1V -30 950MHz -40 0.5 1 1.5 2 2.5 3 -30 0 0.5 1 1.5 Vcont (V) 2 2.5 3 Frequency (GHz) -20 INPUT VSWR vs. FREQUENCY (V =3V) DD OUTPUT VSWR vs. FREQUENCY (V =3V) DD 5 5 4 950MHz Input VSWR 0.1V Output VSWR 4 950MHz 3 0.1V 1.0V 2 V cont 3 V cont =2.0V 1.0V 2 =2.0V 1 0.6 0.7 0.8 0.9 1 1.1 1.2 1 0.6 0.7 0.8 0.9 1 1.1 1.2 Frequency (GHz) Frequency (GHz) OUTPUT POWER, I DD DD vs. INPUT POWER cont ACP, RMS VECTOR ERROR vs. OUTPUT POWER (VDD=3V, Vcont=2V, f=938MHz, offset=50kHz) PDC800MHz Adjacent Channel Leakage Power (dBc) -40 20 (V =3V, V 10 =2V, f=938MHz) 13 Output Power (mA) P-1dB +2.1dBm 0 11 ACP -60 10 -5 Idd 10 -70 RMS Vector Error 5 -10 -30 -25 -20 -15 -10 -5 0 Input Power (dBm) 9 -80 -10 -5 0 5 Output Power (dBm) 0 10 -8- RMS Vector Error (%) Output Power (dBm) 5 12 -50 15 I DD NJG1101F nTYPICAL CHARACTERISTICS 2 (PDC 800MHz Band: Measured on TEST CIRCUIT 2) ACP, RMS VECTOR ERROR vs. Vcont (V DD=3V, Input Power=-25dBm, f=938MHz, offset=50kHz) PDC800MHz Adjacent Channel Leakage Power (dBc) -40 20 PDC800MHz Adjacent Channel Leakage Power (dBc) ACP, RMS VECTOR ERROR vs. Vcont (VDD=3V, Output Power=-10dBm, f=938MHz, offset=50kHz) -40 20 RMS Vector Error (%) -60 10 -60 10 -70 5 -70 5 -80 0 0.5 1 Vcont (V) 1.5 2 0 -80 0 0.5 1 Vcont (V) 1.5 2 0 nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2) GAIN vs. FREQUENCY (V =3V) DD GAIN vs. V 20 cont (V =3V, f=1441MHz) DD 20 V 10 cont =2.0V 1.5V 1.0V 0.5V Gain (dB) 10 0 Gain (dB) 0 -10 -10 -20 -30 1.5GHz -40 0.5 1 1.5 1.9GHz 0.1V -20 -30 2 2.5 3 0 0.5 1 1.5 Vcont (V) 2 2.5 3 Frequency (GHz) GAIN vs. V 20 cont INPUT VSWR vs. FREQUENCY (V =3V, f=1.9GHz) DD (V =3V) 5 DD 10 4 Input VSWR Gain (dB) 0 1.5GHz 1.9GHz 3 0.1V -10 1.0V 2 V cont -20 =2.0V -30 0 0.5 1 1.5 Vcont (V) 2 2.5 3 1 0.5 1 1.5 2 2.5 3 Frequency (GHz) -9- RMS Vector Error (%) -50 15 -50 15 NJG1101F nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2) OUTPUT VSWR vs. FREQUENCY (V =3V) 5 DD OUTPUT POWER, I DD DD vs. INPUT POWER cont (V =3V, V 10 =2V, f=1441MHz) 13 Output Power (dBm) 4 Output VSWR 1.5GHz 1.9GHz 3 5 Output Power P-1dB +1.1dBm 12 Vcont=2.0V 2 1.0V -5 Idd 10 1 0.5 1 1.5 2 2.5 3 -10 -30 -25 -20 -15 -10 -5 0 Input Power (dBm) 9 Frequency (GHz) OUTPUT POWER, I 10 DD vs. INPUT POWER 13 ACP, RMS VECTOR ERROR vs. OUTPUT POWER (V DD=3V, Vcont=2V, f=1441MHz, offset=50kHz) PDC1.5GHz Adjacent Channel Leakage Power (dBc) -40 20 (V DD=3V, Vcont =2V, f=1.9GHz) Output Power P-1dB +1.0dBm (mA) ACP -60 10 -5 Idd 10 I DD 0 11 -70 RMS Vector Error 5 -10 -30 -25 -20 -15 -10 -5 0 Input Power (dBm) 9 -80 -10 -5 0 5 Output Power (dBm) 0 10 ACP, RMS VECTOR ERROR vs. OUTPUT POWER (VDD=3V, Vcont =2V, f=1.9GHz, offset=600kHz) PHS1.9GHz Adjacent Channel Leakage Power (dBc) -40 ACP RMS Vector Error (%) -50 15 20 ACP, RMS VECTOR ERROR vs. Vcont (VDD=3V, Input Power=-25dBm, f=1441MHz, offset=50kHz) -40 PDC1.5GHz Adjacent Channel Leakage Power (dBc) 20 -60 10 -60 10 -70 RMS Vector Error 5 -70 5 -80 -10 -5 0 5 Output Power (dBm) 0 10 -80 0 0.5 1 Vcont (V) 1.5 2 0 - 10 - RMS Vector Error (%) -50 15 RMS Vector Error (%) Output Power (dBm) 5 12 -50 15 I DD 0.1V 0 11 (mA) NJG1101F nTYPICAL CHARACTERISTICS 3 (PDC1.5GHz/PHS1.9GHz Band: Measured on TEST CIRCUIT 2) ACP, RMS VECTOR ERROR vs. Vcont ACP, RMS VECTOR ERROR vs. Vcont (V DD=3V, Output Power=-10dBm, f=1441MHz, offset=50kHz) PDC1.5GHz Adjacent Channel Leakage Power (dBc) -40 20 (VDD=3V, Input Power=-25dBm, f=1.9GHz, offset=600kHz) -40 PHS1.9GHz Adjacent Channel Leakage Power (dBc) 20 RMS Vector Error (%) -50 15 -60 10 -60 10 -70 5 -70 5 -80 0 0.5 V 1 cont 0 1.5 (V) 2 -80 0 0.5 1 Vcont (V) 1.5 2 0 ACP, RMS VECTOR ERROR vs. Vcont (V DD=3V, Output Power=-10dBm, f=1.9GHz, offset=600kHz) PHS1.9GHz Adjacent Channel Leakage Power (dBc) -40 20 -60 10 -70 5 -80 0 0.5 V 1 cont 0 1.5 (V) 2 RMS Vector Error (%) -50 15 - 11 - RMS Vector Error (%) -50 15 NJG1101F nAPPLICATION CIRCUIT VDD 6 RF IN 1 ZO=50 ATT AMP ATT AMP 4 RF OUT ZO=50 3 ZS=50 2 5 VCON ZL=50 - 12 - NJG1101F nTEST CIRCUIT1 (WIDE BAND) C3 C4 39pF 1000pF VDD 3V C1 39pF RF IN (TOP VIEW) 1 2 3 6 5 4 L1 15nH C2 39pF RF OUT VCONT 0~2V C5 39pF nTEST CIRCUIT2 (PDC 800MHz, PDC 1.5GHz, PHS 1.9GHz) C3 C4 39pF 1000pF VDD 3V C1R RF IN 2 3 5 4 L2R (TOP VIEW) 1 6 L1 15nH C2R RF OUT VCONT 0~2V C5 39pF C2 L2 C1 PDC800MHz 100pF 10nH 100pF PDC1.5GHz/PHS1.9GHz 10pF 1.5nH 10pF R NOTE - 13 - NJG1101F nRECOMMENDED PCB DESIGN (Top View) VDD GND C4 L1 C2 C5 VCONT GND RF OUT 20mm C3 RF IN C1 PCB: FR-4 f=0.2mm MICROSTRIP LINE WIDTH=0.4mm (ZO=50) CHIP SIZE: 1608 22.5mm Notes: [1]Following chip capacitors work as bypass capacitor, and should be connected to corresponding terminals and the ground plane as close as possible. C3 -C4 (R)C5 [2]Following chip capacitors are necessary to block DC bias. C1 -C2 [3]Parts list Parts ID C1~C5 L1~L2 Comment MURATA GRM36 Series TAIYO-YUDEN HK1608 Series - 14 - NJG1101F nPACKAGE OUTLINE (MTP6) Lead material Lead surface finish Molding material UNIT Weight : Copper : Solder plating : Epoxy resin : mm : 14mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 15 - |
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